Imec demonstrates world's first III-V FinFET devices monolithically integrated on 300mm silicon wafers
Tuesday, November 5, 2013 - 08:30
in Physics & Chemistry
Imec, a leading nanoelectronics research center, announced today that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers, through a unique silicon fin replacement process. The achievement illustrates progress toward 300mm and future 450mm high-volume wafer manufacturing of advanced heterogeneous CMOS devices, monolithically integrating high-density compound semiconductors on silicon. The breakthrough not only enables continual CMOS scaling down to 7nm and below, but also enables new heterogeneous system opportunities in hybrid CMOS-RF and CMOS-optoelectronics.