World-first UHF IGZO Schottky diode presented: Breakthrough achievement towards low-cost passive thin-film RFID tags

At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec presented the world-first ultra-high frequency Schottky diode based on amorphous IGZO (Indium-Gallium-Zinc Oxide) as semiconductor. This breakthrough achievement will enable the development of thin-film passive UHF (ultra-high frequency) RFID (radiofrequency ID) tags to replace item-level bar codes.

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