PML uses combined optical techniques to provide important answers on graphene structures
That graphene is the hot new material in the world of future electronics manufacturing is well known. With its high carrier mobility and low noise, graphene is seen as a possible candidate to ultimately replace silicon in integrated circuits. Finding a way to fully characterize new materials such as graphene is critical to the ultimate goal of successful engineering and manufacturing of next-generation devices. Researchers at NISTs Physical Measurement Laboratory have brought us one important step closer to this goal with the determination of graphenes work function and the band alignment of a graphene-insulator-semiconductor structure by using the combined optical techniques of internal photoemission (IPE) and spectroscopic ellipsometry (SE).