Researchers prove new circuit pattern-design process, see promise for 14 nanometer design with directed self-assembly
Thursday, May 24, 2012 - 10:53
in Physics & Chemistry
(Phys.org) -- Researchers sponsored by Semiconductor Research Corporation (SRC) announced that they have successfully created contact hole patterns for a wide variety of practical logic and memory devices using a next-generation directed self-assembly (DSA) process. Applying a relatively simple combination of chemical and thermal processes to create their DSA method for making circuits at 22 nanometers (nm), the research team at Stanford University projects that the nanofabrication technique will enable pattern etching for next-generation chips down to 14nm.