New Fujitsu V series FRAMs deliver optimal design flexibility
Monday, March 5, 2012 - 11:02
in Physics & Chemistry
Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage range of 3.0V to 5.5V, offering significant design flexibility for consumer and industrial applications.