Toshiba develops circuit techniques for embedded SRAM operating at 0.5V-1.0V
Wednesday, November 16, 2011 - 07:31
in Physics & Chemistry
Toshiba Corporation today announced it has developed circuit techniques for embedded SRAM that operate in a wide supply voltage range, from 0.5V to 1.0V, that effectively contribute to lower power consumption by electronic devices. The test chip fabricated employs three new techniques to ensure proper operation of SRAM even when the operating voltage varies. At the same time, cell failure rate is reduced and fast operation is achieved. Toshiba has demonstrated these techniques in a 40nm 2Mb SRAM test chip at 0.5V operation. This achievement was reported today at the IEEE Asian Solid-State Circuits Conference (A-SSCC) 2011, now being held in South Korea.