Physics team reports gains in thermoelectric performance for bulk semiconductor material
Tuesday, January 25, 2011 - 17:00
in Physics & Chemistry
(PhysOrg.com) -- Researchers from Boston College, MIT, Clemson and Virginia have used nanotechnology to achieve a 60-90 percent increase in the thermoelectric figure of merit of p-type half-Heusler, a common bulk semiconductor compound, the team reported in the American Chemical Society journal Nano Letters.