Device controls, measures spin current injected into semiconductor material
Tuesday, January 4, 2011 - 10:00
in Physics & Chemistry
The Hitachi Cambridge Laboratory announced that an international research team formed by physicists from Hitachi, the University of Cambridge and University of Nottingham in the UK, Charles University in the Germany, the Institute of Physics (ASCR), in the Czech Republic, and the Texas A&M University, have successfully developed the technology that enables control and measurement of spin current, a magnetic characteristic of electrons, in the same way as electrical current, using a gallium-arsenide semiconductor material.