IMEC shows optimizations for next-generation transistors
Tuesday, July 14, 2009 - 19:21
in Physics & Chemistry
IMEC has achieved promising results in the race to scale CMOS to 22nm and below. The breakthroughs from its transistor scaling programs include a successful integration of the laser-anneal technique in a high-K/metal-gate first process and a step forward towards fabricating aggressively scaled germanium-pFET transistors.