Managing Stress Helps Transistor Performance
Tuesday, May 16, 2017 - 11:31
in Physics & Chemistry
A research team in China have developed a new CESL method that introduces tensile stress into both the channel and the drift region, improving overall performance by offering low drift resistance, high cut-off frequency and desirable breakdown characteristics. Their work is described in an article appearing this week in the journal AIP Advances, from AIP Publishing.