Next-Generation Semiconductors Synthesis
Friday, November 8, 2013 - 12:30
in Physics & Chemistry
Conventional processes for producing AIN layers run at temperatures as high as 1150 degrees Celsius, and offer limited control over the thickness of the layers. Now a new technique, described in the AIP Publishing journal Applied Physics Letters, offers a way to produce high-quality AlN layers with atomic-scale thickness and at half the temperature of other methods.