Researchers develop 128Mb STT-MRAM with world's fastest write speed for embedded memory
Friday, December 28, 2018 - 17:40
in Physics & Chemistry
A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such as cache in IOT and AI. This is currently the world's fastest write speed for embedded memory application with a density over 100Mb and will pave the way for the mass-production of large capacity STT-MRAM.