HiSIM-SOTB, compact transistor model, selected as international industry standard
Friday, January 30, 2015 - 15:00
in Mathematics & Economics
A new compact transistor model was developed and the framework for realizing a faster design support process and product development for integrated circuits in the ultra-low voltage category was established. The new compact model, HiSIM-SOTB (Hiroshima University STARC IGFET Model Silicon-on-Thin BOX), was developed by Hiroshima University’s HiSIM Research Center in collaboration with its partners in the industry and government institutions, including the National Institute of Advanced Industrial Science and Technology (AIST) of Japan.