Picosecond accurate slow-motion confirms oxide materials exhibit considerably faster switching properties than do semi-conductors
Tuesday, July 30, 2013 - 10:00
in Physics & Chemistry
Scientists have observed the switching mechanism from a non-conducting to a conducting state in iron oxide (specifically, magnetite) with previously unrealized precision. This switching mechanism -- which, in oxides, proceeds in two consecutive steps and which is thousands of times faster than it is in current transistors -- has now been described.