Absorbing hydrogen fluoride gas to enhance crystal growth
Saturday, December 12, 2009 - 07:07
in Physics & Chemistry
Two scientists at the U.S. Department of Energy's (DOE) Brookhaven National Laboratory have developed a method to control the buildup of hydrogen fluoride gas during the growth of precision crystals needed for applications such as superconductors, optical devices, and microelectronics. The invention - by Vyacheslav Solovyov and Harold Wiesmann and recently awarded U.S. Patent number 7,622,426 - could lead to more efficient production and improved performance of these materials...