New technique boosts high-power potential for gallium nitride electronics
Wednesday, February 2, 2011 - 12:33
in Physics & Chemistry
Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies -- but these GaN devices traditionally break down when exposed to high voltages. Now researchers have solved the problem, introducing a buffer that allows the GaN devices to handle 10 times greater power.