'Stress Tests' Probe Nanoscale Strains In Materials
Thursday, December 4, 2008 - 10:43
in Physics & Chemistry
Researchers have demonstrated their ability to measure relatively low levels of stress or strain in regions of a semiconductor device as small as 10nm across. Their recent results not only will impact the design of future generations of integrated circuits but also lay to rest a long-standing disagreement in results between two different methods for measuring stress in semiconductors.