IBM builds world's smallest SRAM memory cell
Monday, August 18, 2008 - 11:49
in Physics & Chemistry
IBM and its joint development partners - AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) - today announced the first working static random access memory (SRAM) for the 22 nanometre (nm) technology node, the world's first reported working cell built at its 300 mm research facility in Albany, NY...
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