Development of world's first vertical gallium oxide transistor through ion implantation doping

Thursday, December 13, 2018 - 08:00 in Physics & Chemistry

Researchers at the National Institute of Information and Communications Technology (NICT) and Tokyo University of Agriculture and Technology (TUAT) demonstrate a vertical Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) that adopts an all-ion-implanted process for both n-type and p-type doping, paving the way for new generations of low-cost and highly manufacturable Ga2O3 power electronic devices.

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