A graphene and boron nitride heterostructure creates large spin signals
Tuesday, August 15, 2017 - 05:32
in Physics & Chemistry
Graphene Flagship scientists based at the University of Groningen, The Netherlands, have created a device based on a blilayer of graphene and boron nitride which shows unprecedented spin transport efficiency at room temperature. Highlighting the potential of creating devices containing graphene and related materials, the spin signal measured here is so large that it can be used in real-life applications such as spin based logic and transistors.