Thin films of oxide materials reveal topological electronic properties hidden in the three-dimensional form

Friday, August 15, 2014 - 09:01 in Physics & Chemistry

Naoto Nagaosa and Bohm-Jung Yang from the RIKEN Center for Emergent Matter Science have predicted that thin films of certain iridate compounds could harbor unusual 'topological' electronic properties that are hidden in regular three-dimensional crystals. "Topological phenomena in artificial thin films are much richer than those found in natural crystals. Even more important, however, is the fact that it is possible to manipulate those topological properties by tuning various parameters such as film thickness," comments Nagaosa.

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