Researchers speed up transistors by embedding tunneling field-effect transistor
Friday, August 9, 2013 - 08:50
in Physics & Chemistry
(Phys.org) —Researchers at Fudan University in China have discovered a way to speed up traditional computer transistors by embedding tunneling field-effect transistors (TFETs) in them. In their paper published in the journal Science, the team describes how embedding TFETs in such transistors allows for them to be run with less power, which in turn causes them to run faster.