One-volt operation of high-current vertical channel polymer semiconductor field-effect transistors
Friday, January 4, 2013 - 09:00
in Physics & Chemistry
(Phys.org)—Scientists from the CFN, in collaboration with a scientist from the Condensed Matter Physics and Materials Science Department at BNL, have fabricated a vertical channel polymer semiconductor field effect transistor architecture by confining the organic material within the gratings of interdigitated trenches. These vertical channel transistors have a similar electronic mobility to that of planar devices that use the same polymer semiconductor, which is consistent with a molecular reorientation within the confining trenches that we now understand through synchrotron X-ray scattering measurements that were performed at the National Synchrotron Light Source (NSLS).