New STT-MRAM memory element cuts power consumption of mobile processor by two-thirds
Thursday, December 13, 2012 - 08:30
in Physics & Chemistry
Toshiba Corporation today announced that the company has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the world's lowest power consumption yet reported, indicating that it has the potential to surpass the power consumption efficiency of SRAM as cache memory.