World's first GaN HEMT T/R module operating in the C-Ku band
Monday, June 6, 2011 - 10:00
in Physics & Chemistry
Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that features an output of 10 W and that operates in a wide bandwidth range of C-band, X-band, and Ku-band (C-Ku band) radio frequencies over 6-18 GHz. By combining the world's best performing GaN power amplifier (PA) developed last year with the newly developed GaN low-noise amplifier (LNA), the researchers achieved a compact T/R module that generates a high-output.