Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply
Wednesday, June 24, 2009 - 16:07
in Physics & Chemistry
Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced power consumption of electronic equipment such as IT hardware and home electronics.
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