Fujitsu Develops World's First GaN HEMT Able to Cut Power in Standby Mode and Achieve High Output
Friday, October 10, 2008 - 13:21
in Physics & Chemistry
Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for microwave and millimeter-wave transmissions, frequency ranges for which usage is expected to grow.