Spintronic Technology Advances with Newly Designed Magnetic Tunnel Junctions
Tuesday, March 21, 2017 - 11:31
in Physics & Chemistry
Magnetic tunnel junctions (MTJs) have played a central role in spintronic devices, and researchers are working to improve their performance. A prominent achievement that accelerated the technology's practical applications was the realization of giant tunnel magnetoresistance (TMR) ratios by using rock-salt type MgO crystalline barrier. In this week's Applied Physics Letters, researchers have succeeded in applying MgGa2O4 to a tunnel barrier, the core part of an MTJ, as an alternative material to more conventional insulators.